Micron announced on Thursday that it had started volume production of memory chips using its 3rd third Generation 10 nm class fabrication technology (also known as 1Z nm). The first DRAMs made with Micron's 1Z nm process are 16 Gb monolithic DDR4 and LPDDR4X units, with Micron expected to expand its portfolio over time.
Micron & # 39; s 3 rd Generation 10 nm class (1Z nm) production process for DRAM will allow the company to increase the bit density, improve the performance and lower power consumption of the DRAM chips compared to its n Generation 10 nm class (1Y nm) technology. In particular, the company says its 16Gb DDR4 device uses 40% less power than two 8Gb DDR4 DRAMs (presumably on the same watches). Meanwhile, Micron's 1
The manufacturer did not reveal the speed piles of its 16 Gb DDR4 DRAMs, but expects Micron to be in the official JEDEC series. One of the first products to use the company's 16 Gb DDR4 devices will be high capacity (eg 32 GB and higher) memory modules for desktops, laptops and workstations.
In terms of mobile memory, Micron's 16 Gb LPDDR4X chips are rated for transfer speeds up to 4266 MT / s. In addition to offering LPDDR4X DRAM packs of up to 16 GB (8x16Gb) LPDDR4X for advanced smartphones, Micron will offer UFS -based multichip packages (uMCP4) that integrate NAND for storage and DRAM. The company's uMCP4 family of products aimed at mainstream handsets will include offers ranging from 64 GB + 3 GB to 256 GB + 8 GB (NAND + DRAM).
Micron did not disclose where it produces its monolithic 16 Gb DDR4 and LPDDR4X chips using 1Z nm technology. Usually, the company starts volume production using the latest manufacturing processes at the factory in Hiroshima, Japan. Meanwhile, there has also been some speculation among analysts that the company looks forward to running 1Z production lines this year at the Micron Memory Taiwan (formerly Rexchip Semiconductor) plant near Taichung, Taiwan.